AP40P03GP Advanced Power Electronics Corp., AP40P03GP Datasheet

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... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP40P03GP RoHS-compliant Product BV -30V DSS R 28mΩ DS(ON) I -30A D G TO-220( Rating Units -30 ±20 ...

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... AP40P03GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1 =-10V G 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1.4 1.2 1 0.8 0.6 0.4 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP40P03GP -10V o C -7.0V -5.0V -4. -3 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

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... AP40P03GP =- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000.0 100.0 10.0 o 1 Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 40P03GP LOGO YWWSSS Part Number Package Code meet Rohs requirement Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.25 4.48 b 0.65 0. 1.15 1.38 c 0.40 0. ...