AP40P03GP Advanced Power Electronics Corp., AP40P03GP Datasheet - Page 3

• Manufacturer Part Number: AP40P03GP
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP40P03GP

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 14
• Qgs (nc): 3
• Qgd (nc): 9
• Id(a): -30
• Pd(w): 31.3
• Configuration: Single P
• Package: TO-220

120
100
80
60
40
20
18
15
12
0
50
40
30
20
9
6
3
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
-V
T
-V
-V
Reverse Diode
j
SD
=150
o
DS
C
GS
2
4
, Source-to-Drain Voltage (V)
0.4
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
o
C
0.6
4
6
I
0.8
T
D
C
= -10 A
=25
℃
1
T
8
6
V
j
=25
G
= -3.0 V
1.2
o
-4.5V
-7.0V
-5.0V
C
-10V
1.4
10
8
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
1.4
1.2
1.0
0.8
0.6
0.4
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
I
V
C
D
G
= 1 5 0
=-1 8 A
=-10V
T
Junction Temperature
-V
v.s. Junction Temperature
T
j
j
DS
o
, Junction Temperature (
2
0
, Junction Temperature (
0
C
, Drain-to-Source Voltage (V)
50
50
4
AP40P03GP
o
100
100
o
C)
6
C)
V
G
= -3.0 V
-4.5V
-7.0V
-5.0V
-10V
150
150
8
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