AP4232AGM Advanced Power Electronics Corp., AP4232AGM Datasheet
AP4232AGM
Specifications of AP4232AGM
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AP4232AGM Summary of contents
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... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4232AGM RoHS-compliant Product BV 30V DSS R 23mΩ DS(ON Rating Units 30 ±20 7.8 6 0.016 W/℃ ...
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... AP4232AGM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 1 =10V G 1.3 1.0 0.7 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 1 0.8 0.6 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4232AGM o 10V T = 150 C A 7.0 V 5 Drain-to-Source Voltage ( 100 Junction Temperature ( ...
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... AP4232AGM =15V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4232AGM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW： ...