AP4232AGM Advanced Power Electronics Corp., AP4232AGM Datasheet - Page 4

• Manufacturer Part Number: AP4232AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4232AGM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 23
• Rds(on) / Max(m?) Vgs@4.5v: 35
• Qg (nc): 10
• Qgs (nc): 2
• Qgd (nc): 5.6
• Id(a): 7.8
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

AP4232AGM
0.01
100
0.1
16
12
10
50
40
30
20
10
8
4
0
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Fig 9. Maximum Safe Operating Area
I
V
D
Single Pulse
= 7 A
DS
T
=5V
A
=25
V
4
V
GS
Q
2
DS
o
, Gate-to-Source Voltage (V)
G
C
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
1
T
j
=25
V
8
V
DS
DS
o
V
=15V
C
4
= 18 V
DS
=24V
12
10
T
j
=150
6
16
o
C
100ms
100us
10ms
1ms
DC
1s
100
20
8
Fig 10. Effective Transient Thermal Impedance
0.01
1000
0.1
100
10
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
V
0.05
0.02
0.01
Duty factor=0.5
0.1
0.2
Single Pulse
0.001
G
5
V
DS
Q
GS
, Drain-to-Source Voltage (V)
0.01
t , Pulse Width (s)
9
Q
0.1
Q
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
= 135℃/W
j
t
= P
DM
T
f=1.0MHz
x R
100
thja
25
+ T
C
C
C
Q
a
rss
iss
oss
1000
29
4