AP4435GJ-HF Advanced Power Electronics Corp., AP4435GJ-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4435GJ-HF

Manufacturer Part Number

AP4435GJ-HF

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

Manufacturer

Advanced Power Electronics Corp.

Datasheet

1.AP4435GH-HF.pdf (4 pages)

Specifications of AP4435GJ-HF

Vds

-30V

Vgs

±20V

Rds(on) / Max(m?) Vgs@10v

Rds(on) / Max(m?) Vgs@4.5v

Qg (nc)

16.5

Qgs (nc)

2.7

Qgd (nc)

Id(a)

-40

Pd(w)

44.6

Configuration

Single P

Package

TO-251

Current page: 1 of 4
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▼ Simple Drive Requirement

▼ Lower On-resistance

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Rthj-c

Rthj-a

Data and specifications subject to change without notice

Description

Absolute Maximum Ratings

Thermal Data

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters. The through-hole version (AP4435GJ) is available

for low-profile applications.

STG

Symbol

=25℃

=100℃

=25℃

Advanced Power

Electronics Corp.

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

Operating Junction Temperature Range

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)

Maximum Thermal Resistance, Junction-ambient

Parameter

@ 10V

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Halogen-Free Product

-55 to 150

Rating

-150

44.6

0.36

+20

AP4435GH/J-HF

-30

-40

-25

DS(ON)

DSS

Value

62.5

2.8

110

TO-252(H)

TO-251(J)

20mΩ

200907154

-30V

-40A

Units

W/℃

Units

℃/W

℃

Related parts for AP4435GJ-HF

AP4435GJ-HF Summary of contents

Page 1

... The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4435GJ) is available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP4435GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ℃ T =25 C ...

Page 4

AP4435GH/ Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = ...

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