AP4435GJ-HF Advanced Power Electronics Corp., AP4435GJ-HF Datasheet - Page 4

• Manufacturer Part Number: AP4435GJ-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4435GJ-HF

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 20
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 16.5
• Qgs (nc): 2.7
• Qgd (nc): 11
• Id(a): -40
• Pd(w): 44.6
• Configuration: Single P
• Package: TO-251

AP4435GH/J-HF
1000
100
10
10
1
8
6
4
2
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
90%
10%
Single Pulse
V
V
T
DS
GS
c
=25
-V
o
Q
C
10
DS
t
G
d(on)
V
I
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
D
DS
1
= -26 A
= -25 V
t
r
20
10
t
d(off)
30
t
f
100ms
100us
10ms
1ms
DC
100
40
Fig 10. Effective Transient Thermal Impedance
2000
1600
1200
800
400
0.01
0.1
0.00001
0
1
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
0.02
0.01
0.05
V
0.1
Single Pulse
Duty factor=0.5
0.2
G
5
0.0001
Q
-V
GS
DS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
+ T
C
C
C
Q
C
iss
oss
rss
29
1
4