AP4501GD Advanced Power Electronics Corp., AP4501GD Datasheet - Page 4

• Manufacturer Part Number: AP4501GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501GD

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 9
• Qgs (nc): 2
• Qgd (nc): 5
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
AP4501GD
0.01
0.1
36
24
12
80
60
40
20
10
1
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
J
=150
V
V
SD
Reverse Diode
V
DS
GS
4
, Source-to-Drain Voltage (V)
o
, Drain-to-Source Voltage (V)
C
,Gate-to-Source Voltage (V)
0.4
2
T
A
=25
6
o
C
0.8
4
T
I
T
A
8
D
=25 ℃
J
V
= 5 A
=25
G
= 4.5 V
o
8.0V
6.0V
5.0V
C
10V
1.2
6
10
2.0
1.4
0.8
0.2
1.5
1.2
0.9
0.6
36
24
12
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
v.s. Junction Temperature
Junction Temperature
G
V
D
= 10V
T
=7A
DS
j
T
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
2
T
A
=150
50
50
o
C
4
100
100
o
V
o
C )
C)
G
= 4.5 V
8.0V
6.0V
5.0V
10V
150
150
6
4/7