AP4503AGM-HF Advanced Power Electronics Corp., AP4503AGM-HF Datasheet - Page 6

• Manufacturer Part Number: AP4503AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4503AGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 8.4
• Qgs (nc): 1.4
• Qgd (nc): 4.7
• Id(a): 6.9
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4503AGM-HF
40
30
20
10
50
40
30
20
10
0
8
6
4
2
0
Fig 1. Typical Output Characteristics
2
Fig 3. On-Resistance v.s. Gate Voltage
0
0
Fig 5. Forward Characteristic of
0.2
1
-V
-V
Reverse Diode
-V
GS
DS
4
SD
T
0.4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
j
, Source-to-Drain Voltage (V)
=150
2
0.6
o
T
C
A
3
6
=25
T
I
0.8
D
A
o
=25
C
= -4 A
4
T
o
j
1
C
=25
8
V
G
o
C
= - 3 .0V
5
1.2
- 7.0V
- 5.0V
- 4.5V
- 10V
1.4
6
10
1.6
1.4
1.2
1.0
0.8
0.6
1.2
1.0
0.8
0.6
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
30
V
A
I
G
D
= 150
= - 10V
= -6 A
1
v.s. Junction Temperature
Junction Temperature
-V
T
o
C
T
DS
j
0
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
-30
3
50
50
4
100
100
V
o
C)
o
G
C)
= - 3 .0V
5
- 7.0V
- 5.0V
- 4.5V
- 10V
150
6
150
6