AP4503AGM-HF Advanced Power Electronics Corp., AP4503AGM-HF Datasheet - Page 7

• Manufacturer Part Number: AP4503AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4503AGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 8.4
• Qgs (nc): 1.4
• Qgd (nc): 4.7
• Id(a): 6.9
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
15
12
10
9
6
3
0
1
0.01
0.0
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
90%
10%
V
V
Single Pulse
Operation in this
area limited by
T
GS
DS
4.0
R
A
DS(ON)
=25
V
-V
Q
I
0.1
DS
o
t
D
DS
C
d(on)
8.0
G
= -6A
= -24V
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
t
r
12.0
1
16.0
t
20.0
d(off)
10
t
f
24.0
100ms
100us
10ms
1ms
DC
1 s
28.0
100
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
30
V
0.01
0.05
0.02
0.2
0.1
Duty factor=0.5
G
0.001
Single Pulse
5
-V
Q
GS
DS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
G
GD
AP4503AGM-HF
-30
Charge
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
+ T
C
C
Q
C
a
iss
rss
oss
1000
29
7