AP4503BGM-HF Advanced Power Electronics Corp., AP4503BGM-HF Datasheet - Page 6

• Manufacturer Part Number: AP4503BGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4503BGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 35
• Qg (nc): 7
• Qgs (nc): 2
• Qgd (nc): 4
• Id(a): 8.4
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4503BGM-HF
40
30
20
10
50
40
30
20
0
6
5
4
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
2
0
0
Fig 5. Forward Characteristic of
0.2
1
-V
-V
Reverse Diode
-V
SD
DS
T
4
GS
j
0.4
, Source-to-Drain Voltage (V)
=150
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2
o
0.6
C
T
A
3
6
=25
T
I
0.8
D
A
o
=25
C
= -4 A
T
4
j
o
=25
1
C
8
V
o
G
C
= - 4.0 V
5
1.2
- 7.0 V
- 6.0 V
- 5.0 V
- 10 V
1.4
6
10
1.6
1.4
1.2
1.0
0.8
0.6
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
30
V
I
A
G
D
= 150
= - 10V
= -6 A
-V
v.s. Junction Temperature
Junction Temperature
1
T
o
DS
T
0
C
0
j
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
-30
50
50
3
V
100
100
o
G
o
C)
4
= - 4.0 V
C)
-5.0V
-7.0V
-6.0V
-10V
150
5
150
6