Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness

AP4509GM

Manufacturer Part NumberAP4509GM
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4509GM datasheet
 


Specifications of AP4509GM

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v±20VRds(on) / Max(m?) Vgs@4.5v14
Rds(on) / Max(m?) Vgs@2.5v20Qg (nc)23
Qgs (nc)6Qgd (nc)14
Id(a)10Pd(w)2
ConfigurationComplementary N-PPackageSO-8
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P-Channel
14
12
I
=- 8 A
D
V
=-24V
DS
10
8
6
4
2
0
0
10
20
30
Q
, Total Gate Charge (nC)
G
Fig 7. Gate Charge Characteristics
100
10
1
0.1
o
T
=25
C
A
Single Pulse
0.01
0.1
1
-V
, Drain-to-Source Voltage (V)
DS
Fig 9. Maximum Safe Operating Area
V
DS
90%
10%
V
GS
t
t
r
d(on)
Fig 11. Switching Time Waveform
10000
1000
100
1
40
50
60
Fig 8. Typical Capacitance Characteristics
1
100us
1ms
0.1
10ms
100ms
0.01
1s
DC
0.001
10
100
0.0001
Fig 10. Effective Transient Thermal Impedance
-4.5V
t
t
d(off)
f
Fig 12. Gate Charge Waveform
AP4509GM
f=1.0MHz
5
9
13
17
21
25
-V
, Drain-to-Source Voltage (V)
DS
Duty factor=0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
Single Pulse
T
Duty factor = t/T
Peak T
= P
x R
j
DM
o
R
=135
C/W
thja
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
V
G
Q
G
Q
Q
GS
GD
Charge
C
iss
C
oss
C
rss
29
+ T
thja
a
1000
Q
7