Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness

AP4509GM

Manufacturer Part NumberAP4509GM
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4509GM datasheet
 

Specifications of AP4509GM

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v±20VRds(on) / Max(m?) Vgs@4.5v14
Rds(on) / Max(m?) Vgs@2.5v20Qg (nc)23
Qgs (nc)6Qgd (nc)14
Id(a)10Pd(w)2
ConfigurationComplementary N-PPackageSO-8
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D2
D2
D1
D1
D1
D1
G2
G2
S2
G1
S2
SO-8
S1
G1
SO-8
S1
N-channel
3
3
1
Parameter
3
AP4509GM
RoHS-compliant Product
N-CH BV
30V
DSS
R
14mΩ
DS(ON)
I
10A
D
P-CH BV
-30V
DSS
R
20mΩ
DS(ON)
I
-8.4A
D
D1
G2
G1
S1
Rating
Units
P-channel
30
-30
+20
+20
10
-8.4
7.9
-6.7
30
-30
2.0
0.016
W/℃
-55 to 150
-55 to 150
Value
Unit
62.5
℃/W
200812042
D2
S2
V
V
A
A
A
W
1

AP4509GM Summary of contents

  • Page 1

    ... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO SO-8 S1 N-channel Parameter 3 AP4509GM RoHS-compliant Product N-CH BV 30V DSS R 14mΩ DS(ON) I 10A D P-CH BV -30V DSS R 20mΩ DS(ON) I -8. Rating Units P-channel ...

  • Page 2

    ... AP4509GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... =- =-24V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.7A =-8A dI/dt=-100A/µs AP4509GM Min. Typ. Max. Units -30 - =-1mA - -0. =-250uA - ...

  • Page 4

    ... AP4509GM N-Channel 160 140 120 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 5

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f AP4509GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty factor = t/T Peak ...

  • Page 6

    ... AP4509GM P-Channel 160 140 120 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4509GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

  • Page 8

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4509GM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code ...