AP4800GYT-HF Advanced Power Electronics Corp., AP4800GYT-HF Datasheet - Page 3

• Manufacturer Part Number: AP4800GYT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4800GYT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Qg (nc): 8
• Qgs (nc): 2
• Qgd (nc): 4.6
• Id(a): 11.5
• Pd(w): 3.57
• Configuration: Single N
• Package: PMPAK 3x3

20
16
12
80
60
40
20
28
24
20
16
12
0
8
8
4
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
SD
V
Reverse Diode
V
DS
T
, Source-to-Drain Voltage (V)
GS
2
4
0.4
j
, Drain-to-Source Voltage (V)
=150
, Gate-to-Source Voltage (V)
o
0.6
C
4
6
T
I
T
0.8
D
A
A
= 8 A
=25
=25
o
℃
C
1
T
6
8
j
=25
V
1.2
G
o
C
= 4.0V
7.0V
6.0V
5.0V
10V
1.4
8
10
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.6
1.2
0.8
0.4
60
50
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
=10A
=10V
v.s. Junction Temperature
Junction Temperature
T
1
V
T
j
DS
0
0
, Junction Temperature (
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
T
A
AP4800GYT-HF
= 150
50
50
3
o
C
o
100
100
C)
o
4
C)
V
G
= 4.0V
5.0V
7.0V
6.0V
10V
150
150
5
3