AP4816GSM Advanced Power Electronics Corp., AP4816GSM Datasheet
AP4816GSM
Specifications of AP4816GSM
Related parts for AP4816GSM
AP4816GSM Summary of contents
Page 1
... Thermal Resistance Junction-ambient Rthj-a (Schottky) Thermal Resistance Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE S1/D2 S1/D2 S1/ S2/A S2/A SO-8 G1 Parameter Channel Parameter AP4816GSM RoHS-compliant Product CH-1 BV 30V DSS R 22mΩ DS(ON) I 6.7A D CH-2 BV 30V DSS R 13mΩ DS(ON) I 11. ...
Page 2
... AP4816GSM CH-1 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
Page 3
... D V =24V DS V =4. =15V =3.3Ω, =15Ω = =25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =1A =8A dI/dt=100A/µs AP4816GSM Min. Typ. Max. Units 30 - =1mA - 0.03 D =11A - - = =250uA 1 - =11A - ...
Page 4
... AP4816GSM Schottky Specifications@T Symbol Parameter V Forward Voltage Drop F Maximum Reverse Leakage Current I rm Maximum Reverse Leakage Current C Junction Capacitance T o =25 C(unless otherwise specified) j Test Conditions I =1. =30V r V =30V,T =100℃ =10V r Min. Typ. Max. Units - 0.47 0 0.2 0.004 ...
Page 5
... Fig 2. Typical Output Characteristics 1.4 1.2 1.0 0.8 0 -50 2 = 0.5 1 1.2 1.4 -50 AP4816GSM ℃ 150 Drain-to-Source Voltage ( = =10V 100 o T ,Junction Temperature ( C) j Fig 4. Normalized On-Resistance v.s. Junction Temperature 0 50 100 o T ,Junction Temperature ( ...
Page 6
... AP4816GSM Channel = =15V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...
Page 7
... 1 = 1.2 1.0 0.8 0.6 - 2.0 1 1.7 1.6 1.5 0.9 1.1 -50 AP4816GSM o T =150 Drain-to-Source Voltage (V) DS Fig 2. Typical Output Characteristics =10V 100 Junction Temperature ( C) j Fig 4. Normalized On-Resistance v.s. Junction Temperature 0 50 100 ...
Page 8
... AP4816GSM Channel = =15V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...
Page 9
... T , Junction Temperature ( j Fig 1. Reverse Current vs Junction Temperature 1000 100 Drain-to-Source Voltage (V) DS Fig 3. Typical Junction Capacitance 100 125 Fig 2. Typical Forward Characteristics f=1.0MHz AP4816GSM o o =150 0.3 0.6 0.9 1 Forward Voltage Drop (V) F 1.5 9/9 ...