AP4816GSM Advanced Power Electronics Corp., AP4816GSM Datasheet - Page 5

• Manufacturer Part Number: AP4816GSM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4816GSM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 22
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 7
• Id(a): 6.7
• Pd(w): 1.4
• Configuration: Dual N
• Package: SO-8

Channel-1
120
100
80
60
40
20
32
28
24
20
16
0
6
5
4
3
2
1
0
0
3
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
=25
T
0.2
j
=150
V
V
o
V
Reverse Diode
C
1
SD
DS
GS
5
o
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
0.4
C
2
0.6
7
0.8
3
T
T
j
1
I
=25
A
D
9
=25
= 5 A
4
V
o
C
o
G
1.2
C
=3.0V
10V
7.0V
5.0V
4.5V
1.4
11
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.5
1.5
0.5
80
70
60
50
40
30
20
10
0
2
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
I
V
= 150
D
G
=6A
=10V
V
T
v.s. Junction Temperature
Junction Temperature
DS
℃
T
j
,Junction Temperature (
0
1
0
j
, Drain-to-Source Voltage (V)
,Junction Temperature (
50
50
2
AP4816GSM
o
100
100
3
C)
o
C)
V
G
=3.0V
10V
7.0V
5.0V
4.5V
150
150
4
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