AP4835GMT-HF Advanced Power Electronics Corp., AP4835GMT-HF Datasheet
AP4835GMT-HF
Specifications of AP4835GMT-HF
Related parts for AP4835GMT-HF
AP4835GMT-HF Summary of contents
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... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP4835GMT-HF Halogen-Free Product BV -30V DSS R 21mΩ DS(ON) I -32A □ ® ...
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... AP4835GMT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2.0 I =-15A D V =-10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.4 1.2 1.0 o =25 C 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP4835GMT-HF o -10V C -7.0V -6.0V -5.0V V =-4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
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... AP4835GMT- =-15A - Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...