AP4835GMT-HF Advanced Power Electronics Corp., AP4835GMT-HF Datasheet - Page 4

• Manufacturer Part Number: AP4835GMT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4835GMT-HF

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 21
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 14
• Qgs (nc): 3
• Qgd (nc): 8.5
• Id(a): -32
• Pd(w): 31.3
• Configuration: Single P
• Package: PMPAK 5x6

AP4835GMT-HF
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
V
Fig 9. Maximum Safe Operating Area
Operation in this area
10%
90%
I
Single Pulse
limited by R
V
DS
T
D
V
GS
=-15A
C
= -15 V
DS
=25
4
DS(ON)
-V
o
Q
C
0.1
DS
t
G
d(on)
8
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
r
12
1
16
t
d(off)
20
10
t
f
24
100ms
100us
10ms
1ms
DC
100
28
Fig 10. Effective Transient Thermal Impedance
1600
1200
800
400
0.01
0.1
0
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
0.02
0.1
0.01
0.05
Duty factor=0.5
V
0.2
Single Pulse
G
5
0.0001
-V
Q
GS
DS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
25
thjc
C
C
C
+ T
oss
Q
rss
iss
c
10
29
4