AP9685GM Advanced Power Electronics Corp., AP9685GM Datasheet
AP9685GM
Specifications of AP9685GM
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AP9685GM Summary of contents
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... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9685GM Pb Free Plating Product BV 80V DSS R 45mΩ DS(ON Rating Units 80 ±20 5.3 3.4 50 2.5 0.02 W/℃ ...
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... AP9685GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... I =5. 1.6 =25 ℃ ℃ ℃ ℃ G 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 1.5 1 0.5 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9685GM 10V o C 6.0V 5. Drain-to-Source Voltage (V) DS =10V 0 50 100 150 Junction Temperature ( ...
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... AP9685GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...