AP9685GM Advanced Power Electronics Corp., AP9685GM Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9685GM

Manufacturer Part Number
AP9685GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9685GM

Vds
80V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
45
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
19
Qgs (nc)
5
Qgd (nc)
10
Id(a)
5.3
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9685GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
BV
ΔBV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
Electrical Characteristics@T
Source-Drain Diode
t
Notes:
AP9685GM
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad.
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=2A, V
=5A,
=5A
=1A
=3.3Ω,V
=40Ω
=0V, I
=10V, I
=4.5V, I
=V
=10V, I
=80V, V
=64V, V
=±20V
=64V
=4.5V
=40V
=0V
=25V
GS
V
Test Conditions
Test Conditions
GS
, I
GS
D
D
=1mA
=0V
D
D
=0
D
=250uA
GS
GS
GS
=5.3A
=5A
=3.0A
V
=0V
=0V
=10V
,
D
=1mA
Min.
Min.
80
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.073
1710 2730
Typ.
Typ.
135
19
10
11
36
22
98
42
84
9
5
6
-
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
1.2
45
50
25
30
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
uA
uA
nA
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
V
V
S
V
2/4

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