AP4957GM Advanced Power Electronics Corp., AP4957GM Datasheet
AP4957GM
Specifications of AP4957GM
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AP4957GM Summary of contents
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... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4957GM Pb Free Plating Product BV DSS R 24mΩ DS(ON) I -7. Rating -30 ±20 -7.7 -6.1 -30 2 0.016 ...
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... AP4957GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 1 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 2.0 1 =25 C 1.0 j 0.5 0.0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP4957GM o C -10V -7.0V -5.0V -4.5V V =-3. Drain-to-Source Voltage (V) DS =-10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o ...
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... AP4957GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...