AP4957GM Advanced Power Electronics Corp., AP4957GM Datasheet - Page 4

• Manufacturer Part Number: AP4957GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4957GM

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 24
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 27
• Qgs (nc): 5
• Qgd (nc): 18
• Id(a): -7.7
• Pd(w): 2
• Configuration: Dual P
• Package: SO-8

AP4957GM
0.01
100
0.1
40
30
20
10
12
10
10
8
6
4
2
0
1
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Fig 9. Maximum Safe Operating Area
V
DS
V
Single Pulse
I
=-5V
DS
T
10
D
-V
A
= - 7 A
= - 24 V
-V
=25
DS
Q
2
GS
G
, Drain-to-Source Voltage (V)
o
T
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
C
20
1
j
=25
o
C
30
4
T
10
40
j
=150
6
o
C
50
100ms
10ms
1ms
DC
1s
100
60
8
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
0.01
100
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
V
G
0.001
5
Duty factor=0.5
0.01
0.05
0.02
0.1
0.2
-V
Q
Single Pulse
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
0.1
Q
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
10
thja
21
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
+ T
Q
C
C
C
a
oss
iss
rss
1000
29