AP62T03GJ Advanced Power Electronics Corp., AP62T03GJ Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP62T03GJ

Manufacturer Part Number
AP62T03GJ
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP62T03GH.pdf (4 pages)

Specifications of AP62T03GJ

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12
Rds(on) / Max(m?) Vgs@4.5v
18
Qg (nc)
11.5
Qgs (nc)
2
Qgd (nc)
6.8
Id(a)
54
Pd(w)
47
Configuration
Single N
Package
TO-251

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
AP62T03GJ
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Data & specifications subject to change without notice
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
□
RoHS-compliant Product
4
-55 to 175
-55 to 175
Rating
BV
R
I
G
D
0.31
+20
120
30
54
38
47
20
20
DS(ON)
D
G
DSS
S
Value
D
AP62T03GH/J
62.5
3.2
110
S
TO-252(H)
TO-251(J)
12mΩ
200903124
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
54A
mJ
W
℃
℃
V
V
A
A
A
A
1

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AP62T03GJ Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The ...

Page 2

AP62T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = ...

Page 4

AP62T03GH =15V Total Gate Charge (nC) G Fig 7. Gate Charge ...

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