AP62T03GJ Advanced Power Electronics Corp., AP62T03GJ Datasheet - Page 4

• Manufacturer Part Number: AP62T03GJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP62T03GJ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 11.5
• Qgs (nc): 2
• Qgd (nc): 6.8
• Id(a): 54
• Pd(w): 47
• Configuration: Single N
• Package: TO-251

AP62T03GH/J
1000
100
10
16
12
90
60
30
1
8
4
0
0
0.1
0
0
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
V
Single Pulse
T
DS
4
c
=5V
=25
V
V
Q
o
DS
GS
V
8
C
V
G
V
DS
,Drain-to-Source Voltage (V)
DS
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
I
1
=15V
2
=2 0 V
D
= 25 V
12
= 20 A
T
j
=25
16
o
C
20
10
4
24
T
j
=175
28
100ms
100us
10ms
1ms
o
DC
C
100
32
6
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.02
0.01
0.1
0.05
V
0.2
Single Pulse
G
Duty factor=0.5
0.0001
5
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
1
x R
25
thjc
Q
+ T
C
C
C
C
rss
iss
oss
10
29
4