AP6679GM-HF Advanced Power Electronics Corp., AP6679GM-HF Datasheet - Page 4

• Manufacturer Part Number: AP6679GM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6679GM-HF

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 13
• Qg (nc): 37
• Qgs (nc): 3
• Qgd (nc): 25
• Id(a): -14
• Pd(w): 2.5
• Configuration: Single P
• Package: SO-8

AP6679GM-HF
0.01
100
0.1
10
10
1
8
6
4
2
0
0.01
0
Fig 9. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Operation in this area
Fig 7. Maximum Safe Operating Area
V
limited by R
I
Single Pulse
V
90%
10%
D
T
DS
V
= - 14 A
A
DS
= -24V
GS
=25
DS(ON)
-V
Q
o
C
0.1
DS
G
20
t
d(on)
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
t
r
1
40
t
d(off)
10
60
t
f
100ms
100us
10ms
1ms
DC
1s
100
80
10000
Fig 8. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
0.0001
1
Fig 10. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
G
0.001
Duty factor=0.5
5
0.01
0.02
-V
0.05
0.2
0.1
Single Pulse
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
Q
Q
0.1
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
Rthja=125
21
10
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
25
100
thja
Coss
Crss
+ T
Q
Ciss
a
1000
29
4