AP6680AGM Advanced Power Electronics Corp., AP6680AGM Datasheet
AP6680AGM
Specifications of AP6680AGM
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AP6680AGM Summary of contents
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... STG T Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP6680AGM RoHS-compliant Product BV 30V DSS R 11mΩ DS(ON) I 12A SO-8 S ...
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... AP6680AGM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =10V G 1.3 1.0 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 10.0 0.0 1 1.2 0 Fig 6. On-Resistance vs. Drain Current AP6680AGM 10V 150 C A 7.0 V 5 Drain-to-Source Voltage ( 100 125 150 Junction Temperature ( ...
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... AP6680AGM =15V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 6680AGM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code ...