AP6680AGM Advanced Power Electronics Corp., AP6680AGM Datasheet - Page 4

• Manufacturer Part Number: AP6680AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6680AGM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 11
• Rds(on) / Max(m?) Vgs@4.5v: 16.5
• Qg (nc): 17
• Qgs (nc): 2.7
• Qgd (nc): 9.9
• Id(a): 12
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP6680AGM
0.01
100
0.1
16
12
10
50
40
30
20
10
0
8
4
0
1
0.01
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Fig 9. Maximum Safe Operating Area
Single Pulse
T
A
=25
V
DS
V
o
V
GS
=5V
C
Q
0.1
10
DS
, Gate-to-Source Voltage (V)
G
V
V
V
I
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
D
DS
2
DS
DS
= 12 A
T
= 25 V
=15V
=20V
j
=25
20
o
1
C
T
j
=150
4
10
30
o
C
100ms
100us
10ms
1ms
DC
1s
100
40
6
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
0.01
100
0.1
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
V
0.01
0.02
0.001
G
Duty factor=0.5
0.05
5
0.2
0.1
Single Pulse
V
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
Q
0.1
Q
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
= 135℃/W
t
j
= P
DM
T
f=1.0MHz
x R
100
thja
25
+ T
C
C
C
Q
a
iss
oss
rss
1000
29
4