AP6910GSM-HF Advanced Power Electronics Corp., AP6910GSM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-effectiveness

AP6910GSM-HF

Manufacturer Part Number
AP6910GSM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6910GSM-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
15.8
Rds(on) / Max(m?) Vgs@4.5v
23
Qg (nc)
6
Qgs (nc)
1.4
Qgd (nc)
3.4
Id(a)
9
Pd(w)
2
Configuration
Dual N
Package
SO-8
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
G1
3
3
S1/D2
SO-8
S1/D2
S1/D2
D1
D1
G2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
S2
3
CH-1
CH-2
CH-1
+20
30
7.2
40
N-Channel 2
N-Channel 1
9
Halogen-Free Product
-55 to 150
-55 to 150
MOSFET
MOSFET
G1
G2
Rating
2.0
BV
R
I
BV
R
I
D
D
AP6910GSM-HF
DS(ON)
DS(ON)
DSS
DSS
Value
62.5
+20
CH2
D1
7.2
30
40
9
15.8mΩ
15.8mΩ
200912282
Units
℃/W
30V
30V
Unit
9A
9A
W
S1/D2
V
V
A
A
A
1

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AP6910GSM-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET S1/D2 S1/D2 S1/ SO Parameter 3 AP6910GSM-HF Halogen-Free Product CH-1 BV 30V DSS R 15.8mΩ DS(ON CH-2 BV 30V DSS R 15.8mΩ DS(ON ...

Page 2

... AP6910GSM-HF CH-1 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =15V DS V =4. =15V =3Ω, =1.7Ω = =25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =1A =9A dI/dt=100A/µs AP6910GSM-HF Min. Typ = = =250uA = = 1 =10V - 430 - ...

Page 4

... AP6910GSM-HF Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 0.1 1ms 10ms 100ms 1s 0.01 10s DC 0.001 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP6910GSM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T ...

Page 6

... AP6910GSM-HF Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.1 0 0.2 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP6910GSM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

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