AP6910GSM-HF Advanced Power Electronics Corp., AP6910GSM-HF Datasheet - Page 7

• Manufacturer Part Number: AP6910GSM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6910GSM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 15.8
• Rds(on) / Max(m?) Vgs@4.5v: 23
• Qg (nc): 6
• Qgs (nc): 1.4
• Qgd (nc): 3.4
• Id(a): 9
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

Channel-2
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
Operation in this
Single Pulse
I
area limited by
V
V
T
D
R
GS
DS
DS(ON)
= 9 A
A
=25
2
V
DS
o
Q
0.1
C
t
V
G
d(on)
, Drain-to-Source Voltage (V)
DS
, Total Gate Charge (nC)
4
= 15 V
t
r
6
1
8
t
d(off)
10
t
10
f
100ms
100us
10ms
1ms
DC
1s
100
12
Fig 10. Effective Transient Thermal Impedance
1000
0.001
800
600
400
200
0.01
0.1
0
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
0.02
0.01
0.001
Single Pulse
G
Duty factor=0.5
0.1
0.2
0.05
5
Q
V
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
G
GD
AP6910GSM-HF
Charge
17
1
P
DM
Duty factor = t/T
Peak T
R
10
21
thja
=135
j
t
= P
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
C
C
Q
C
+ T
oss
rss
iss
a
1000
29
7