AP70L02GP Advanced Power Electronics Corp., AP70L02GP Datasheet - Page 5

• Manufacturer Part Number: AP70L02GP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP70L02GP

• Vds: 25V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 23
• Qgs (nc): 3
• Qgd (nc): 17
• Id(a): 66
• Pd(w): 66
• Configuration: Single N
• Package: TO-220

100
0.1
10
16
14
12
10
1
8
6
4
2
0
0
0
Fig 9. Gate Charge Characteristics
I
V
Fig 11. Forward Characteristic of
D
5
DS
=33A
=20V
0.2
10
T
j
Q
=150
Reverse Diode
G
15
0.4
, Total Gate Charge (nC)
o
C
20
V
SD
0.6
25
(V)
30
0.8
T
35
j
=25
o
40
C
1
45
1.2
50
Fig 10. Typical Capacitance Characteristics
10000
1000
100
Fig 12. Gate Threshold Voltage v.s.
3
2
1
0
-50
1
Junction Temperature
6
T
0
j
, Junction Temperature(
11
V
AP70L02GS/P
16
DS
50
(V)
21
100
o
C)
26
f=1.0MHz
C
C
C
oss
iss
rss
150
31
5