AP72T02GH-HF Advanced Power Electronics Corp., AP72T02GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP72T02GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP72T02GH-HF

• Vds: 25V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 13
• Qgs (nc): 2.7
• Qgd (nc): 9
• Id(a): 62
• Pd(w): 60
• Configuration: Single N
• Package: TO-252

AP72T02GH/J-HF
1000
100
120
10
80
40
12
1
9
6
3
0
0
0.1
0
0
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig7. Gate Charge Characteristics
I
V
D
=30A
DS
T
Single Pulse
V
=5V
c
V
DS
V
=25
V
Q
DS
V
=10V
DS
GS
2
G
DS
o
, Drain-to-Source Voltage (V)
=15V
T
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
C
=20V
10
1
j
=25
o
C
4
10
20
T
j
=175
6
o
100us
1ms
10ms
100ms
1s
DC
C
100
30
8
Fig 8. Typical Capacitance Characteristics
Fig10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
40
30
20
10
0.00001
0
1
1
0
Fig 12. Drain-Source On Resistance
0.02
0.01
0.05
2.8V
Duty factor=0.5
Single Pulse
5
0.1
0.0001
0.2
20
V
3V
DS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.001
3.2V
40
13
I
D
0.01
3.5V
(A)
10V
17
60
P
0.1
3.8V
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
80
T
x R
1
4.2V
25
thjc
4.5V
C
+ T
C
C
C
rss
oss
iss
29
100
10
4