AP9918GH Advanced Power Electronics Corp., AP9918GH Datasheet - Page 3

• Manufacturer Part Number: AP9918GH
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9918GH

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@2.5v: 14
• Rds(on) / Max(m?) Vgs@1.8v: 28
• Qgs (nc): 16
• Qgd (nc): 3
• Id(a): 9
• Pd(w): 45
• Configuration: 31.25
• Package: TO-252

0.01
100
120
100
0.1
10
80
60
40
20
26
24
22
20
18
16
14
12
10
1
0
0
0
1
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
0.2
V
V
o
Reverse Diode
V
C
DS
SD
GS
1
2
T
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
j
, Gate-to-Source Voltage (V)
=150
0.4
o
C
0.6
2
3
I
T
D
C
= 18 A
=25
0.8
o
T
C
j
=25
3
4
V
G
o
1
=2.5V
C
4.5V
4.0V
3.5V
3.0V
1.2
4
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0
1
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
C
D
G
=150
=18A
=4.5V
Junction Temperature
v.s. Junction Temperature
V
T
o
Junction Temperature (
C
DS
1
j
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
50
50
AP9918GH/J
o
C )
100
100
3
o
C)
V
G
=2.5V
4.5V
4.0V
3.5V
3.0V
150
150
4
3