AP9922GEO-HF Advanced Power Electronics Corp., AP9922GEO-HF Datasheet - Page 3

• Manufacturer Part Number: AP9922GEO-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9922GEO-HF

• Vds: 20V
• Vgs: ±8V
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Rds(on) / Max(m?) Vgs@2.5v: 22
• Rds(on) / Max(m?) Vgs@1.8v: 30
• Qg (nc): 28
• Qgs (nc): 4
• Qgd (nc): 9
• Id(a): 6.4
• Pd(w): 1
• Configuration: Dual N
• Package: TSSOP-8

30
20
10
30
25
20
15
10
0
10
8
6
4
2
0
0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
1
V
SD
Reverse Diode
GS
DS
2
, Source-to-Drain Voltage (V)
T
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
j
0.4
=150
T
1
A
o
=25
C
0.6
4
o
I
T
C
D
A
= 4 A
2
=25
0.8
℃
T
j
=25
6
2
o
V
1
C
G
=1.8V
5.0V
4.5V
3.5V
2.5V
1.2
3
8
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0.2
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
G
D
= 4.5 V
= 6 A
v.s. Junction Temperature
Junction Temperature
V
1
T
DS
T
j
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
2
T
A
AP9922GEO-HF
= 150
50
50
o
3
C
100
100
o
C)
o
V
4
C)
G
=1.8V
5.0V
4.5V
3.5V
2.5V
150
150
5
3