AP9435GJ Advanced Power Electronics Corp., AP9435GJ Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP9435GJ

Manufacturer Part Number
AP9435GJ
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP9435GH.pdf (4 pages)

Specifications of AP9435GJ

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
90
Qg (nc)
8
Qgs (nc)
1.6
Qgd (nc)
4.3
Id(a)
-20
Pd(w)
12.5
Configuration
Single P
Package
TO-251
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-252/TO-251 package is widely used for commercial-industrial
application.
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
12.5
- 30
- 20
+20
-13
-60
0.1
DS(ON)
DSS
Value
62.5
G
110
10
G
AP9435GH/J
D
S
D
S
TO-252(H)
TO-251(J)
50mΩ
200902256
- 20A
-30V
Units
W/℃
Units
℃/W
℃/W
℃/W
W
℃
℃
V
V
A
A
A
1

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AP9435GJ Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The TO-252/TO-251 package is widely ...

Page 2

AP9435GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate ...

Page 3

T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 90 I =-10A D ℃ ...

Page 4

AP9435GH =-10A D V =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse ...

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