AP9435GJ Advanced Power Electronics Corp., AP9435GJ Datasheet - Page 4

• Manufacturer Part Number: AP9435GJ
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9435GJ

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 50
• Rds(on) / Max(m?) Vgs@4.5v: 90
• Qg (nc): 8
• Qgs (nc): 1.6
• Qgd (nc): 4.3
• Id(a): -20
• Pd(w): 12.5
• Configuration: Single P
• Package: TO-251

AP9435GH/J
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
V
90%
10%
I
DS
V
D
V
=-10A
Single Pulse
GS
DS
=-24V
T
C
-V
=25
4
DS
Q
t
o
G
d(on)
, Drain-to-Source Voltage (V)
C
, Total Gate Charge (nC)
1
t
8
r
12
10
t
d(off)
16
t
f
100ms
100us
10ms
1ms
DC
100
20
Fig 10. Effective Transient Thermal Impedance
1000
100
0.01
10
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
0.02
0.01
0.1
0.05
V
0.2
Single Pulse
Duty factor=0.5
G
5
-V
0.0001
DS
Q
9
, Drain-to-Source Voltage (V)
GS
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
0.1
f=1.0MHz
T
x R
thjc
25
+ T
Coss
Crss
Q
Ciss
C
29
1
4