AP4451GYT-HF Advanced Power Electronics Corp., AP4451GYT-HF Datasheet
AP4451GYT-HF
Specifications of AP4451GYT-HF
Available stocks
Related parts for AP4451GYT-HF
AP4451GYT-HF Summary of contents
Page 1
... J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP4451GYT-HF Halogen-Free Product BV -30V DSS R 14.5mΩ DS(ON) I -13. ® ...
Page 2
... AP4451GYT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... I =-10A D V =-10V G 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 I =-250uA D 1.6 1 0.8 0.4 0.0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4451GYT-HF o -10V T = 150 C A -7.0V -6.0V -5. -4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 Junction Temperature ( ...
Page 4
... AP4451GYT Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...