AP4451GYT-HF Advanced Power Electronics Corp., AP4451GYT-HF Datasheet - Page 3

• Manufacturer Part Number: AP4451GYT-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4451GYT-HF

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 14.5
• Rds(on) / Max(m?) Vgs@4.5v: 32
• Qg (nc): 16.5
• Qgs (nc): 5
• Qgd (nc): 9
• Id(a): -13.1
• Pd(w): 3.57
• Configuration: Single P
• Package: PMPAK 3x3

50
40
30
20
10
24
20
16
12
10
0
8
8
6
4
2
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
-V
0.2
1
-V
Reverse Diode
SD
-V
DS
4
, Source-to-Drain Voltage (V)
GS
, Drain-to-Source Voltage (V)
T
0.4
, Gate-to-Source Voltage (V)
2
j
=150
o
C
0.6
3
6
T
I
T
D
A
A
=25
= -6 A
=25
0.8
4
o
℃
C
T
8
j
V
=25
G
1
5
= -4.0V
o
-7.0V
-6.0V
-5.0V
C
-10V
1.2
6
10
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
I
V
D
D
=-250uA
G
=-10A
=-10V
v.s. Junction Temperature
Junction Temperature
T
-V
1
T
j
DS
0
0
, Junction Temperature (
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
T
2
A
= 150
AP4451GYT-HF
50
50
o
C
3
o
100
100
C)
o
V
C)
4
G
= -4.0V
-7.0V
-6.0V
-5.0V
-10V
150
150
5
3