AP2N7002K-HF Advanced Power Electronics Corp., AP2N7002K-HF Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2N7002K-HF

Manufacturer Part Number
AP2N7002K-HF
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2N7002K-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
2000
Rds(on) / Max(m?) Vgs@4.5v
4000
Qg (nc)
1
Qgs (nc)
0.5
Qgd (nc)
0.5
Id(a)
0.45
Pd(w)
0.7
Configuration
Single N
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2N7002K-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
, V
, V
GS
GS
@ 10V
@ 10V
SOT-23
D
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
S
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
0.005
D
+20
450
360
950
0.7
60
DS(ON)
AP2N7002K-HF
DSS
Value
G
180
450mA
201006244
Units
W/℃
℃/W
60V
Unit
mA
mA
mA
W
D
V
V
S
1

Related parts for AP2N7002K-HF

AP2N7002K-HF Summary of contents

Page 1

... Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D SOT-23 G Parameter 10V 10V GS 1 Parameter 3 AP2N7002K-HF Halogen-Free Product BV 60V DSS R 2Ω DS(ON) I 450mA Rating Units 60 +20 450 360 950 0.7 0.005 W/℃ ...

Page 2

... AP2N7002K-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I = 450m 200m =10V = 1.5 1.0 0.5 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.7 1 0.9 0.5 -50 1.6 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2N7002K-HF o 10V C 7.0V 5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP2N7002K- 450m =40V DS V =50V 0 Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1.000 0.100 0.010 Single Pulse 0.001 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 1.0 V = ...

Related keywords