AP2N7002K-HF Advanced Power Electronics Corp., AP2N7002K-HF Datasheet
AP2N7002K-HF
Manufacturer Part Number
AP2N7002K-HF
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
... Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D SOT-23 G Parameter 10V 10V GS 1 Parameter 3 AP2N7002K-HF Halogen-Free Product BV 60V DSS R 2Ω DS(ON) I 450mA Rating Units 60 +20 450 360 950 0.7 0.005 W/℃ ...
... AP2N7002K-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
... AP2N7002K- 450m =40V DS V =50V 0 Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1.000 0.100 0.010 Single Pulse 0.001 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 1.0 V = ...