AP2N7002K-HF Advanced Power Electronics Corp., AP2N7002K-HF Datasheet - Page 3

• Manufacturer Part Number: AP2N7002K-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2N7002K-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 2000
• Rds(on) / Max(m?) Vgs@4.5v: 4000
• Qg (nc): 1
• Qgs (nc): 0.5
• Qgd (nc): 0.5
• Id(a): 0.45
• Pd(w): 0.7
• Configuration: Single N
• Package: SOT-23

1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.6
0.4
0.2
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
Reverse Diode
DS
T
V
V
j
0.4
4
GS
=150
, Drain-to-Source Voltage (V)
SD
, Gate-to-Source Voltage (V)
2.0
, Source-to-Drain Voltage (V)
o
T
C
A
=25
0.8
6
o
C
4.0
T
j
I
=25
1.2
8
T
V
D
A
= 200m A
G
o
=25
= 3.0 V
C
7.0V
5.0V
4.5V
10V
o
C
6.0
1.6
10
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.5
1.0
0.5
1.7
1.3
0.9
0.5
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
T
D
V
A
= 450m A
G
= 150
=10V
v.s. Junction Temperature
Junction Temperature
T
V
o
j
C
DS
T
0
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
AP2N7002K-HF
50
50
4
100
o
100
C)
V
o
C)
G
= 3.0 V
7.0V
5.0V
4.5V
10V
150
150
6
3