AP4523GD Advanced Power Electronics Corp., AP4523GD Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4523GD

Manufacturer Part Number
AP4523GD
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4523GD

Vds
40V
Vgs
±10V
Rds(on) / Max(m?) Vgs@10v
40
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
7
Qgs (nc)
2
Qgd (nc)
3
Id(a)
5.6
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
▼ ▼ ▼ ▼ Low Gate Charge
▼ ▼ ▼ ▼ Fast Switching Speed
▼ ▼ ▼ ▼ PDIP-8 Package
▼ ▼ ▼ ▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1
D1
PDIP-8
D1
3
3
D2
D2
S1
G1
S2
3
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
G1
Pb Free Plating Product
±10
5.6
4.5
30
40
-55 to 150
-55 to 150
Rating
0.016
2.0
R
I
R
I
D
D
P-channel
D1
DS(ON)
DS(ON)
DSS
DSS
S1
Value
62.5
-40
±20
-5.1
-4
-30
G2
AP4523GD
201129051-1/7
40mΩ
52mΩ
-5.1A
-40V
5.6A
Units
W/℃
℃/W
40V
Unit
W
D2
V
V
A
A
A
S2

Related parts for AP4523GD

AP4523GD Summary of contents

Page 1

... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4523GD Pb Free Plating Product N-CH BV 40V DSS R 40mΩ DS(ON) I 5.6A D P-CH BV -40V DSS R 52mΩ DS(ON) I -5. ...

Page 2

... AP4523GD N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... D V =-30V DS V =-4. =-20V =3.3Ω, =20Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.5A =-5A dI/dt=-100A/µs AP4523GD Min. Typ. Max. Units -40 - =-1mA - -0. =-250uA - ...

Page 4

... AP4523GD N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4523GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 0.01 Duty factor = t/T Peak ...

Page 6

... AP4523GD P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 160 140 120 100 ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 10ms 0.1 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance =150 Fig 12. Gate Charge Waveform AP4523GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T Peak 0.01 ...

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