AP4523GD Advanced Power Electronics Corp., AP4523GD Datasheet - Page 5

• Manufacturer Part Number: AP4523GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4523GD

• Vds: 40V
• Vgs: ±10V
• Rds(on) / Max(m?) Vgs@10v: 40
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 7
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 5.6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
0.01
100
0.1
10
1
16
12
30
25
20
15
10
0.1
5
0
8
4
0
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
DS
=5V
Single Pulse
T
V
V
Q
A
5
DS
GS
=25
G
V
T
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
1
I
DS
j
2
o
D
=25
C
=5A
=30V
o
C
10
T
j
10
=150
4
15
o
C
100ms
100us
10ms
1ms
DC
1s
20
100
6
Fig 10. Effective Transient Thermal Impedance
1000
100
0.01
10
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
0.01
0.05
0.2
0.1
G
Duty factor=0.5
5
0.001
V
Single Pulse
Q
DS
GS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.01
Q
Q
G
13
GD
Charge
0.1
17
P
AP4523GD
1
DM
Duty factor = t/T
Peak T
R
thja
21
=90
j
= P
t
o
C/W
f=1.0MHz
DM
T
10
x R
thja
25
Q
+ T
C
C
C
a
iss
rss
oss
100
5/7