AP9565GEM Advanced Power Electronics Corp., AP9565GEM Datasheet

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... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP9565GEM Pb Free Plating Product BV -40V DSS R 38mΩ DS(ON) I -6. Rating Units -40 ±16 -6.5 -5.2 -30 2.5 0.02 W/℃ ...

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... AP9565GEM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1 =25 C 1.4 1.0 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 60.0 50 40.0 30.0 20.0 1 1.2 0 Fig 6. On-Resistance vs. Drain Current AP9565GEM o T =150 C -10V A -7.0V -5.0V -4. -3. Drain-to-Source Voltage ( -10V 100 125 o , Junction Temperature ( ...

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... AP9565GEM - -30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 0 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = Gate-to-Source Voltage (V) GS Fig 11 ...