AP9565GEM Advanced Power Electronics Corp., AP9565GEM Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9565GEM

Manufacturer Part Number
AP9565GEM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9565GEM

Vds
-40V
Vgs
±16V
Rds(on) / Max(m?) Vgs@10v
38
Rds(on) / Max(m?) Vgs@4.5v
48
Qg (nc)
12.8
Qgs (nc)
2.1
Qgd (nc)
6.3
Id(a)
-6.5
Pd(w)
2.5
Configuration
Single P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP9565GEM
Quantity:
45 000
Part Number:
AP9565GEM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
Electrical Characteristics@T
Source-Drain Diode
t
Notes:
AP9565GEM
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=-6A
=-1A
G
D
=-1.9A, V
=-6A,
=20Ω
=3.3Ω,V
=V
=-10V, I
=-40V, V
=-32V, V
=-30V
=-20V
=-25V
=0V, I
=-10V, I
=-4.5V, I
=± 16V
=-4.5V
=0V
GS
V
Test Conditions
Test Conditions
, I
GS
D
D
=-250uA
GS
=-250uA
D
GS
D
=0
D
GS
GS
=-6A
=-6A
=-4A
=0V
=-10V
V
=0V
=0V
,
D
=-1mA
Min.
Min.
-0.8
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.02
12.8
26.9
36.9
Typ.
Typ.
980
160
110
2.1
6.3
8.9
25
19
6
6
6
-
-
-
-
-
-
-
-
Max. Units
1570
Max. Units
-2.5
-1.3
±30
-25
38
48
20
-1
9
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
nC
nC
nC
nC
uA
uA
uA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V
2/4

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