AP4951GM Advanced Power Electronics Corp., AP4951GM Datasheet
AP4951GM
Specifications of AP4951GM
Available stocks
Related parts for AP4951GM
AP4951GM Summary of contents
Page 1
... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4951GM RoHS-compliant Product BV -60V DSS R 96mΩ DS(ON) I -3. Rating Units -60 ±20 -3.4 -2.7 -20 2 0.016 W/℃ ...
Page 2
... AP4951GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
Page 3
... Fig 2. Typical Output Characteristics -3. -10V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance 1.8 1 1.4 1.2 1 0.8 0.6 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP4951GM -10V o C -7.0V -5.0V -4. . Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...
Page 4
... AP4951GM - -48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = ...
Page 5
... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4951GM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW： ...