AP4951GM Advanced Power Electronics Corp., AP4951GM Datasheet - Page 3

• Manufacturer Part Number: AP4951GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4951GM

• Vds: -60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 96
• Rds(on) / Max(m?) Vgs@4.5v: 120
• Qg (nc): 29.5
• Qgs (nc): 3
• Qgd (nc): 7
• Id(a): -3.4
• Pd(w): 2
• Configuration: Dual P
• Package: SO-8

10.00
8.00
6.00
4.00
2.00
0.00
100
40
30
20
10
90
80
70
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0.2
2
0
Fig 5. Forward Characteristic of
T
A
=25
-V
0.4
o
-V
-V
Reverse Diode
C
2
SD
DS
GS
4
, Source-to-Drain Voltage (V)
T
C
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
j
0.6
=150
4
o
0.8
6
I
T
D
A
= -2.7A
6
=25
1
℃
T
j
=25
8
V
8
G
o
1.2
=-3.0V
C
-7.0V
-5.0V
-4.5V
-10V
10
1.4
10
30
20
10
1.6
1.2
0.8
0.4
1.8
1.6
1.4
1.2
0.8
0.6
0
2
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
Fig 6. Gate Threshold Voltage v.s.
I
V
A
D
G
=150
= -3.4A
= -10V
2
v.s. Junction Temperature
T
o
-V
T
Junction Temperature
C
j
j
DS
0
0
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
4
6
50
50
8
AP4951GM
o
100
100
o
C)
C)
V
G
10
=- 3 .0V
-7.0V
-5.0V
-4.5V
-10V
12
150
150
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