AP9970GP-HF Advanced Power Electronics Corp., AP9970GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP9970GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9970GP-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 3.2
• Qg (nc): 100
• Qgs (nc): 14
• Qgd (nc): 54
• Id(a): 120
• Pd(w): 375
• Configuration: Single N
• Package: TO-220

320
240
160
80
80
60
40
20
8
6
4
2
0
0
0
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
0.2
2
V
T
V
DS
V
Reverse Diode
T
j
SD
GS
=175
4
C
, Drain-to-Source Voltage (V)
0.4
= 25
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
4
o
o
C
C
0.6
6
6
I
T
0.8
D
A
=40A
=25
8
T
o
C
j
1
=25
8
V
o
C
GS
10
1.2
=5.0V
8.0V
7.0V
6.0V
10V
1.4
12
10
160
120
2.4
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
80
40
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=60A
=10V
V
v.s. Junction Temperature
Junction Temperature
0
0
2
DS
T
T
T
j
j
C
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
= 175
50
50
4
o
C
AP9970GP-HF
100
100
6
o
o
150
V
150
C)
C)
8
GS
=5.0V
8.0V
7.0V
6.0V
10V
200
200
10
3