Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9974BGP

Manufacturer Part NumberAP9974BGP
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP9974BGP datasheet
 

Specifications of AP9974BGP

Vds60VVgs±20V
Rds(on) / Max(m?) Vgs@10v13.5Qg (nc)52
Qgs (nc)13Qgd (nc)20
Id(a)65Pd(w)104
ConfigurationSingle NPackageTO-220
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (94Kb)Embed
Next
Advanced Power
Electronics Corp.
▼ Low On-resistance
▼ Single Drive Requirement
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications and suited for low voltage applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP9974BGP
RoHS-compliant Product
BV
60V
DSS
R
13.5mΩ
DS(ON)
I
65A
D
G
TO-220(P)
D
S
Rating
Units
60
+20
65
40
260
104
-55 to 150
-55 to 150
Value
Units
1.2
℃/W
62
℃/W
200906193
V
V
A
A
A
W
1

AP9974BGP Summary of contents

  • Page 1

    ... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9974BGP RoHS-compliant Product BV 60V DSS R 13.5mΩ DS(ON) I 65A D G TO-220( Rating Units 60 ...

  • Page 2

    ... AP9974BGP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.4 1 1.0 0.8 0.6 0.4 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9974BGP o 10V C 8 .0V 7 Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 ...

  • Page 4

    ... AP9974BGP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...