AP9974BGP Advanced Power Electronics Corp., AP9974BGP Datasheet - Page 4

• Manufacturer Part Number: AP9974BGP
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9974BGP

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 13.5
• Qg (nc): 52
• Qgs (nc): 13
• Qgd (nc): 20
• Id(a): 65
• Pd(w): 104
• Configuration: Single N
• Package: TO-220

AP9974BGP
1000
100
10
12
10
1
8
6
4
2
0
0.1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
Single Pulse
T
10%
90%
V
V
I
C
D
DS
GS
=25
= 30 A
V
V
o
Q
C
DS
V
DS
20
1
t
DS
G
= 30 V
V
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= 36 V
DS
= 48 V
t
r
10
40
t
d(off)
100ms
100us
10ms
100
1ms
60
DC
t
f
1000
80
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
0.00001
Fig 8. Typical Capacitance Characteristics
1
1
Fig 12. Gate Charge Waveform
10V
0.1
V
0.2
0.02
0.01
0.05
Duty factor=0.5
G
Single Pulse
5
0.0001
V
Q
DS
GS
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
0.1
T
x R
f=1.0MHz
thjc
25
+ T
C
C
Q
C
C
oss
iss
rss
1
29
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