AP75T10GP-HF Advanced Power Electronics Corp., AP75T10GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP75T10GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP75T10GP-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 15
• Rds(on) / Max(m?) Vgs@4.5v: 21
• Qg (nc): 69
• Qgs (nc): 12
• Qgd (nc): 39
• Id(a): 65
• Pd(w): 138
• Configuration: Single N
• Package: TO-220

250
200
150
100
50
17
16
15
14
13
12
11
45
30
15
0
0
Fig 3. On-Resistance v.s. Gate Voltage
0
0
2
Fig 1. Typical Output Characteristics
T
Fig 5. Forward Characteristic of
T
C
= 25
0.2
j
=150
V
V
DS
V
o
SD
C
2
4
GS
o
Reverse Diode
, Drain-to-Source Voltage (V)
0.4
C
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
0.6
4
6
0.8
T
I
1
T
C
D
6
8
j
=25
=16A
=25
V
G
o
=3.0V
o
1.2
C
6.0 V
5.0V
4.5V
C
10V
10
1.4
8
120
100
Fig 2. Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.5
0.5
80
60
40
20
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
0
2
1
0
-50
0
-50
T
C
V
I
1
= 150
D
G
Junction Temperature
=30A
v.s. Junction Temperature
=10V
V
DS
2
T
o
T
0
C
0
j
, Drain-to-Source Voltage (V)
j
,Junction Temperature (
, Junction Temperature (
3
4
AP75T10GP-HF
50
50
5
6
100
100
o
7
o
C)
V
C)
G
=3.0V
5.0V
4.5V
8
6.0V
10V
150
150
9
3