AP75T10GP-HF Advanced Power Electronics Corp., AP75T10GP-HF Datasheet - Page 4

• Manufacturer Part Number: AP75T10GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP75T10GP-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 15
• Rds(on) / Max(m?) Vgs@4.5v: 21
• Qg (nc): 69
• Qgs (nc): 12
• Qgd (nc): 39
• Id(a): 65
• Pd(w): 138
• Configuration: Single N
• Package: TO-220

AP75T10GP-HF
1000
100
12
10
10
8
6
4
2
0
1
0.1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
T
Single Pulse
I
10%
90%
c
V
V
D
=25
DS
GS
= 30 A
20
V
o
DS
C
V
V
V
Q
1
DS
DS
DS
, Drain-to-Source Voltage (V)
t
G
40
d(on)
= 50 V
= 64 V
= 80 V
, Total Gate Charge (nC)
t
r
60
10
80
t
100
d(off)
100
100us
1ms
10ms
100ms
DC
t
f
120
1000
140
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
10000
1000
0.01
100
0.1
0.00001
1
1
Fig 12. Gate Charge Waveform
4.5V
V
G
Duty factor=0.5
0.01
0.1
0.02
5
0.2
0.05
Single Pulse
V
0.0001
Q
DS
GS
,Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
Q
+ T
C
C
C
C
oss
rss
iss
1
29
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