AP85T08GS Advanced Power Electronics Corp., AP85T08GS Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP85T08GS

Manufacturer Part Number
AP85T08GS
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP85T08GS

Vds
80V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
13
Qg (nc)
63
Qgs (nc)
23
Qgd (nc)
38
Id(a)
75
Pd(w)
138
Configuration
Single N
Package
TO-263
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP85T08GP) are available for low-profile applications.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
1.11
±20
260
138
450
S
80
75
48
30
DS(ON)
G D
DSS
Value
AP85T08GS/P
0.9
62
S
TO-263(S)
TO-220(P)
200912072-1/4
13mΩ
Units
W/℃
Units
℃/W
℃/W
80V
75A
mJ
W
V
V
A
A
A
A

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AP85T08GS Summary of contents

Page 1

... Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter Max. Max. AP85T08GS/P BV 80V DSS R 13mΩ DS(ON) I 75A TO-263(S) G TO-220( Rating Units 80 V ± ...

Page 2

... AP85T08GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.0 I =45A =20A D V =10V 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance 2.0 1.5 1.0 o =25 C 0.5 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP85T08GS/P o 10V T = 150 C C 7.0 V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 ...

Page 4

... AP85T08GS Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 XXXXXS 85T08GS YWWSSS YWWSSS θ θ Part Number Part Number Package Code Package Code LOGO ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 85T08GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.25 4.48 b 0.65 0. 1.15 1.38 c 0.40 0.50 c1 1.00 1.20 E 9.70 10.00 E1 --- --- ...

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